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부품번호 | P1403EVG 기능 |
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기능 | P-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
www.DataSheet.co.kr
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 14mΩ
ID
-11
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O therwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
100% UIS tested
LIMITS
-30
±25
-11
-9
-50
-43
90
2.5
1.6
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-30
-1 -1.7
-3
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
-1
µA
-10
REV 1.3
Jun-22-2010
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
3.00E-09
Capacitance Characteristic
Body Diode Forward Voltage VS Source current
1 .0 E + 0 2
2.50E-09
2.00E-09
1.50E-09
1.00E-09
5.00E-10
0.00E+00
0
CISS
f = 1MHz
VGS = 0V
COSS
CRSS
5 10 15 20 25
-VDS, Drain-To-Source Voltage(V)
30
1.0E +01
1.0E + 00
1.0E -01
1.0E -02
1.0E -03
TJ =150° C
TJ =25° C
1.0E -04
1 .0 E -0 5
0 .0
0.2 0.4
0.6 0.8 1.0
-VSD, Source-To-Drain Voltage(V)
1 .2
Safe Operating Area
100
Single Pulse Maximum Power Dissipation
500
10
↓
Oper ation in This Ar ea
1 is Lim ited by RDS(ON)
100us
1ms
10ms
100ms
1S
400
300
200
SINGLE PULSE
RθJA = 50˚ C/W
TA=25˚ C
0.1 NOTE :
1.VGS= 10V
2.TA=25˚ C
3.RθJA = 50˚ C/W
4.Single Pulse
0.01
0.1
1
10S
DC
100
0
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS, Drain-To-Source Voltage(V)
Transient Thermal Response Curve
REV 1.3
T1 , Square Wave Pulse Duration[sec]
4
Jun-22-2010
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
P1403EV8 | P-Channel Enhancement Mode MOSFET | UNIKC |
P1403EV8 | P-Channel Field Effect Transistor | NIKO-SEM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |