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부품번호 | 2SB1605A 기능 |
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기능 | Silicon PNP epitaxial planar type(For low-freauency power amplification) | ||
제조업체 | Panasonic Semiconductor | ||
로고 | |||
Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1605
base voltage 2SB1605A
VCBO
–60
–80
Collector to 2SB1605
emitter voltage 2SB1605A
VCEO
–60
–80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–5
–3
35
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB1605
current
2SB1605A
Collector cutoff
2SB1605
current
2SB1605A
Emitter cutoff current
Collector to emitter 2SB1605
voltage
2SB1605A
ICES
ICEO
IEBO
VCEO
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–200
–200
µA
–300
–300
µA
–1 mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
70
10
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
250
–1.8 V
–1.2 V
30 MHz
0.5 µs
1.2 µs
0.3 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
1
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구 성 | 총 2 페이지수 | ||
다운로드 | [ 2SB1605A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SB1605 | Silicon PNP epitaxial planar type(For low-freauency power amplification) | Panasonic Semiconductor |
2SB1605 | SILICON POWER TRANSISTOR | SavantIC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |