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2N6660-2 데이터시트 PDF




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부품번호 2N6660-2 기능
기능 N-Channel 60 V (D-S) MOSFET
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2N6660-2 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
Configuration
TO-205AD
(TO-39)
S
1
60
3
Single
2
G
3
D
Top View
ORDERING INFORMATION
PART
2N6660
2N6660-2
2N6660JANTX
2N6660JANTXV
PACKAGE
TO-205AD
(TO-39)
FEATURES
• Military Qualified
• Low On-Resistence: 1.3
• Low Threshold: 1.7 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 8 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
DESCRIPTION/DSCC
PART NUMBER
Commercial
Commercial, Lead (Pb)-free
wwwS.veiesh-2ayF.lcowomD/odcoucm?e6n7t 884
JANTX2N6660 (std Au leads)
JANTX2N6660 (with solder)
JANTX2N6660P (with PIND)
JANTXV2N6660 (std Au leads)
JANTXV2N6660P (with PIND)
VISHAY ORDERING
PART NUMBER
2N6660
2N6660-E3
2N6660-2
2N6660JTX02
2N6660JTXL02
2N6660JTXP02
2N6660JTXV02
2N6660JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Thermal Resistance, Junction-to-Ambientb
RthJA
Thermal Resistance, Junction-to-Case
RthJC
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
LIMIT
60
± 20
0.99
0.62
3
6.25
0.725
170
20
- 55 to 150
UNIT
V
A
W
°C/W
°C
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




2N6660-2 pdf, 반도체, 판매, 대치품
www.DataSheet.co.kr
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 120
VDS = 5 V
TJ = 150 °C
100
1 80
VGS = 0 V
f = 1 MHz
25 °C
0.1
0.01
0.5
125 °C
- 55 °C
1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Threshold Region
15.0
ID = 1.0 A
12.5
10.0
VDS = 30 V
7.5 48 V
5.0
2.5
0
0 100 200 300 400 500
Qg - Total Gate Charge (pC)
Gate Charge
1.0
Duty Cycle = 0.5
600
60
40
20
0
0
C iss
C oss
C rss
10 20 30 40
VDS - Drain-to-Source Voltage (V)
Capacitance
100
VDD = 25 V
50
Rg = 25 Ω
VGS = 0 V to 10 V
50
20
10
td(off)
5 tr
td(on)
2 tf
1
0.1 1 10
ID - Drain Current (A)
Load Condition Effects on Switching
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 20 °C/W
3. TJM - TC = PDMZthJC(t)
0.01
0.1
1.0 10 100 1 K
t1 - Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 K
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70223.
S11-1542-Rev. D, 01-Aug-11
4
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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2N6660-2

N-Channel 60 V (D-S) MOSFET

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