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PDF 2SB1693 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1693 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SB1693
Silicon PNP epitaxial planar type
For general amplification
■ Features
• Large collector current IC
• Mini type package, allowing downsizing of the equipment and auto-
matic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−40
−20
−15
− 0.5
−1
200
150
−55 to +150
Unit
V
V
V
A
A
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 3D
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
VEBO
hFE1
hFE2
VCE(sat)
fT
Cob
Conditions
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −2 V, IC = −100 mA
VCE = −2 V, IC = −500 mA
IC = −100 mA, IB = −10 mA
IC = − 0.5 A, IB = −25 mA
VCB = −5 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
−40
−20
−15
160
100
Typ Max
560
−60
−210
170
16
−300
−500
Unit
V
V
V
mV
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: September 2003
SJC00292AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1693.PDF ] | |
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