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PDF AON7422 Data sheet ( Hoja de datos )
| Número de pieza | AON7422 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON7422
N-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AON7422 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
32A
< 4.6mΩ
< 6mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3
Bottom View
Pin 1
Top View
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
32
25
150
15
11
47
110
35
14
1.7
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
3
Max
40
75
3.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2009
www.aosmd.com
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120 TA=25°C
100 TA=150°C
80
TA=100°C
60
40 TA=125°C
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
35
30
25
20
15
10
5
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: February 2009
www.aosmd.com
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON7422.PDF ] | |
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