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011N40P1 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 011N40P1
기능 KHB011N40P1
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011N40P1 데이터시트, 핀배열, 회로
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 10.5A
Drain-Source ON Resistance :
RDS(ON)=0.53 @VGS =10V
Qg(typ.) =32.5nC
MAXIMUM RATING (Tc=25
CHARACTERISTIC
RATING
SYMBOL
KHB011N40F1 UNIT
KHB011N40P1
KHB011N40F2
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
400
30
10.5 10.5*
6.6 6.6*
42 42*
360
13.5
4.5
135 44
1.07 0.35
150
-55 150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.93
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.86 /W
- /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB011N40P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB011N40P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB011N40F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB011N40F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/1
Datasheet pdf - http://www.DataSheet4U.net/




011N40P1 pdf, 반도체, 판매, 대치품
www.DataSheet.co.kr
KHB011N40P1/F1/F2
2800
2400
2000
1600
1200
800
400
0
10-1
Fig7. C - VDS
Frequency = 1MHz
Ciss
Coss
Crss
100 101
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
(KHB011N40P1)
102
Operation in this area
is limited by RDS(ON)
10µs
101 100µs
1ms
100
Tc= 25 C
Tj = 150 C
10-1 Single nonrepetitive pulse
100 101
10ms
100ms
DC
102 103
Drain - Source Voltage VDS (V)
Fig11. ID - Tj
12
10
8
6
4
2
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2007. 5. 10
Revision No : 0
12
ID = 10.5A
10
8
6
Fig8. Qg- VGS
VDS = 80V
VDS = 200V
VDS = 320V
4
2
0
0 5 10 15 20 25
Gate - Charge Qg (nC)
30
Fig10. Safe Operation Area
(KHB011N40F1, KHB011N40F2)
102
Operation in this area
is limited by RDS(ON)
10µs
101 100µs
1ms
100 10ms
10-1
Tc= 25 C
Tj = 150 C
10-2 Single nonrepetitive pulse
100 101
100ms
DC
102 103
Drain - Source Voltage VDS (V)
4/7
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011N40P1 전자부품, 판매, 대치품
www.DataSheet.co.kr
KHB011N40P1/F1/F2
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 x VDSS
10V
DUT
driver
VGS
VDS
IS
ISD
(DUT)
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2007. 5. 10
Revision No : 0
7/7
Datasheet pdf - http://www.DataSheet4U.net/

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