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PDF SIZ700DT Data sheet ( Hoja de datos )
| Número de pieza | SIZ700DT | |
| Descripción | N-Channel 20-V (D-S) MOSFETs | |
| Fabricantes | Vishay Siliconix | |
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SiZ700DT
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Channel-1
0.0086 at VGS = 10 V
20
0.0108 at VGS = 4.5 V
Channel-2
0.0058 at VGS = 10 V
20
0.0066 at VGS = 4.5 V
ID (A)
16a
16a
16a
16a
Qg (Typ.)
9.5 nC
27 nC
PowerPAIR™ 6 x 3.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
VIN/D1
Pin 1
G1 3.73 mm
1 D1
2
D1
D1
3
G2
6 S2
5
S1/D2
S2
4
6.00 mm
GLS
6 GND
VSW
5 GND
4
GHS
1 VIN
2
VIN 3
VIN
Ordering Information: SiZ700DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
GHS/G1
N-Channel 1
MOSFET
GLS/G2
N-Channel 2
MOSFET
GND/S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 20
16a
16a
13.1b, c
10.5b, c
60
14.7
1.96b, c
2.36
± 16
16a
16a
17.3b, c
13.9b, c
60
16a
2.3b, c
2.8
1.5 1.78
1.4b, c
1.47b, c
0.9b, c
0.94b, c
- 55 to 150
260
VSW/S1/D2
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
39 53 33 45
5.7 7.1 3.7 4.6
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W for Channel-1 and 85 °C/W for Channel-2.
Document Number: 69090
S09-0534-Rev. A, 06-Apr-09
www.vishay.com
1
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New Product
SiZ700DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
TJ = - 50 °C
0.025
0.020
0.015
0.010
0.005
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.5
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
0.2
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 µA
50
40
30
20
10
- 1.0
-50 -25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power
10 µs
10 100 µs
1 ms
1 10 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
100 s, DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
10
Document Number: 69090
S09-0534-Rev. A, 06-Apr-09
www.vishay.com
5
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New Product
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
SiZ700DT
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69090.
Document Number: 69090
S09-0534-Rev. A, 06-Apr-09
www.vishay.com
11
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