|
|
PDF SIZ300DT Data sheet ( Hoja de datos )
| Número de pieza | SIZ300DT | |
| Descripción | Dual N-Channel 30 V (D-S) MOSFETs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SIZ300DT (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
SiZ300DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0240 at VGS = 10 V
Channel-1 30
0.0320 at VGS = 4.5 V
0.0110 at VGS = 10 V
Channel-2 30
0.0165 at VGS = 4.5 V
ID (A)a Qg (Typ.)
11
3.5 nC
11
28
21.2 nC
28
PowerPAIR® 3 x 3
Pin 1
S1/D2
8
G2 7
S2 6
S2 5
S2
G1
D1
3 mm
1 D1
2
D1 3
D1
4
3 mm
Ordering Information:
SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• PowerPAIR Optimizes High-Side and Low-Side
MOSFETs for Synchronous Buck Converters
• TrenchFET® Power Mosfets
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Computing System Power
• POL
• Synchronous Buck Converter
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 25 °C
L = 0.1 mH
VDS
VGS
ID
IDM
IS
IAS
EAS
11a
11a
9.8b, c
7.8b, c
30
11a
3.2b, c
12
7
30
± 20
28a
28a
14.9b, c
11.9b, c
40
26
3.8b, c
15
11
V
A
mJ
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
16.7 31
10.7 20
3.7b, c
4.2b, c
2.4b, c
2.7b, c
- 55 to 150
260
W
°C
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 67715
www.vishay.com
S11-1646-Rev. B, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.06
TJ = 150 °C
10
1 TJ = 25 °C
0.05
0.04
0.03
0.02
0.01
ID = 9.8 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.4
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.2 40
2.0 30
1.8 ID = 250 μA
1.6
20
10
1.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1 1 10
Time (s)
100
Single Pulse Power
1000
10
100 μs
1 ms
1 10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67715
www.vishay.com
S11-1646-Rev. B, 15-Aug-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ300DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
1
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 64 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
Single Pulse
0.02
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67715.
Document Number: 67715
www.vishay.com
S11-1646-Rev. B, 15-Aug-11
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SIZ300DT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SIZ300DT | Dual N-Channel 30 V (D-S) MOSFETs | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |