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PDF BD9540EFV Data sheet ( Hoja de datos )
| Número de pieza | BD9540EFV | |
| Descripción | 2ch Switching Regulators | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hi-performance Regulator IC Series for PCs
2ch Switching Regulators
for Desktop PC
BD9540EFV
No.09030EBT07
●Description
BD9540EFV is a 2ch switching regulator synchronous controller that can generate low output voltages (0.75V to 5.5V). High
efficiency for the switching regulator can be achieved due to its external N-MOSFET power transistor. The IC also
incorporates a new technology called H3RegTM, a Rohm proprietary control method which facilitates ultra-high transient
response against changes in load. For protection and ease of use, the IC also incorporates soft start, and short circuit
protection with timer latch functions. This switching regulator is designed for DRAM and power supplies for graphics chips.
●Features
1) 2ch H3RegTM DC/DC converter synchronous controller
2) Thermal Shut Down (TSD), Under-Voltage Lock-Out (UVLO),
Adjustable Over Current Protection (OCP) : detected Low side FET Ron, Over Voltage Protection (OVP),
Short Circuit Protection (SCP) built-in
3) Soft start function to minimize rush current during startup
4) HTSSOP-B28 package
5) Built-in 5V power supply for FET driver
6) Integrated bootstrap diode
●Applications
LCD-TV, Game Consoles, Desktop PCs
●Maximum Absolute Ratings (Ta=25℃)
Parameter
Input Voltage
BOOT Voltage
BOOT-SW Voltage
HG-SW Voltage
Symbol
VIN
BOOT1,BOOT2
BOOT1-SW1, BOOT2-SW2
HG1-SW1, HG2-SW2
Limit
24*1
30*1
7*1
7*1
LG Voltage
Output Voltage
LG1, LG2
VOUT1, VOUT2
5VReg
7*1
Output Feedback Voltage
5VReg Voltage
FB1, FB2
5VReg
5VReg
7*1
Current Limit Setting Voltage
Logic Input Voltage 1
Logic Input Voltage 2
Power dissipation 1
Power dissipation 2
Power dissipation 3
Power dissipation 4
ILIM1, ILIM2
EN1, EN2
CTL1, CTL2
Pd1
Pd2
Pd3
Pd4
5VReg
24*1
7*1
1.45*2
1.85*3
3.30*4
4.70*5
Operating Temperature Range
Topr
-20～+100
Storage Temperature Range
Tstg -55～+150
Junction Temperature
Tjmax
+150
*1 Not to exceed Pd.
*2 Reduced by 11.6mW for each increase in Ta of 1℃ over 25℃
(when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB, 1layer, no copper foil area.)
*3 Reduced by 14.8mW for increase in Ta of 1℃ over 25℃.
(when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB, 2layers, copper foil area : 15mm×15mm.)
*4 Reduced by 26.4mW for increase in Ta of 1℃ over 25℃.
(when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB, 2layers, copper foil area : 70mm×70mm.)
*5 Reduced by 37.6mW for increase in Ta of 1℃ over 25℃.
(when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB, 4layers, copper foil area : 70mm×70mm.)
Unit
V
V
V
V
V
V
V
V
V
V
V
W
W
W
W
℃
℃
℃
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
1/17
2009.04 - Rev.B
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
BD9540EFV
●Reference Data
Technical Note
VOUT2
50[mV/div]
SW1
10[V/div]
SW2
10[V/div]
IOUT2
2[A/div]
VOUT2
50[mV/div]
SW1
10[V/div]
SW2
10[V/div]
(2μs/div)
Fig.1 Transient Respnse
(VIN=12V VOUT2=1.05V)
IOUT2
2[A/div]
VOUT1
50[mV/div]
(2μs/div)
Fig.2 Transient Respnse
(VIN=12V VOUT2=1.05V)
SW1
10[V/div]
SW2
10[V/div]
IOUT2
2[A/div]
(2μs/div)
Fig.3 Transient Respnse
(VIN=12V VOUT1=3.3V)
VOUT1
50[mV/div]
SW1
10[V/div]
SW2
10[V/div]
IOUT2
2[A/div]
EN
50[V/div]
VOUT
0.5[V/div]
SW
10[V/div]
IL
2[A/div]
1msec(typ)
EN
50[V/div]
VOUT
0.5[V/div]
SW
10[V/div]
IL
2[A/div]
1msec(typ)
(2μs/div)
Fig.4 Transient Respnse
(VIN=12V VOUT1=3.3V)
HG, LG
20[V/div]
VOUT
1[V/div]
28μsec(typ)
Fig.5 VOUT wake up
(Io=0A)
130
RILIM=100kΩ
120
110
100
Fig.6 VOUT wake up
(Io=4A)
100
Vo=1.8V
80 Vo=1.2V
60
40
IL
5[A/div]
Fig.7 OCP and SCP
2.5
2
1.5
1
0.5
0
-20
VIN=12V
VCC=VREG5V
EN1=EN2=3V
0 20 40 60
Ta [℃]
Fig.10 Ta-IIN
80 100
90
80
-20
0 20 40 60
Ta [℃]
Fig.8 Ta-VILIM
80 100
10
20
0
0.01
2.5
VIN=12V
VMOSFET:MP6K61
0.1 1
IOUT [A]
Fig.9 IOUT-Efficiency
10
82
6 1.5
4
VIN=12V
2 VCC=VREG5V
EN1=EN2=0V
0
-20 0 20 40 60 80 100
Ta [℃]
Fig.11 Ta-IIN_STB
1
0.5
0
0
VCC=VREG5V
EN1=EN2=3V
5 10 15
VIN [V]
Fig.12 VIN-IIN
20
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
5/17
2009.04 - Rev.B
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
BD9540EFV
4. MOSFET Selection
VIN
main switch
L
Co
VOUT
synchronous switch
Technical Note
Main MOSFET power dissipation is computed as follows:
Pmain = PRON + PGATE + PTRAN
=
VOUT
VIN
×RON×IOUT2+Qg(High)×f×5VReg+VIN 2×Crss×IOUT×f
IDRIVE
・・・(9)
(Ron: On-resistance of FET; Qg: FET gate capacitance;
f: Switching frequency; Crss: FET inverse transfer function;
IDRIVE: Gate peak current)
Synchronous MOSFET power dissipation is computed as follows:
Psyn = PRON + PGATE
VIN-VOUT
=
×RON×IOUT2+5VReg×f×VDD
・・・(10)
VIN
Qg loss is also incurred as internal power dissipation in the IC:
= PIC(DRIVE) = Qg(High)×f + Qg(Low)×f ×(VIN-5VReg) ・・・(11)
For example:
If Qg(High) = 20nq, Qg(Low) = 50nq, f = 300kHz,
PIC(DRIVE) = 20n×300k +50n×300k ×(12-5)
= 0.147W
5. Determining Detection Resistance
RILIM
VIN
L
SW
PGND
VOUT
Co
The over-current protection function is controlled via the voltage detected
between the SW and PGND pins – i.e., the ON-resistance of the
synchronous FET. The current limit value is determined by formula (12)
below:
ILIM=
10k [A]・・・(12)
RILIM ×RON
(RILIM: Resistance for setting over-current protection limit,
RON: Low side FET On-resistance)
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
11/17
2009.04 - Rev.B
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BD9540EFV.PDF ] | |
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