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BA159 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BA159
기능 Fast Recovery Diodes
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BA159 데이터시트, 핀배열, 회로
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Naina Semiconductor Ltd.
BA159
Features
Diffused junction
High efficiency
Low forward voltage drop
Low power loss
High surge current capability
Fast Recovery Diode, 1.0A
Mechanical Characteristics
Case: Molded Plastic
Cathode indicated by Polarity band
Mounting position: Any
Terminals: Finish Tin plated, Solderable per
MIL-STD-202, Method 208
Weight: 0.33 grams (approx.)
Maximum Ratings (TA = 250C unless otherwise specified)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current @ TA = 500C
Peak forward surge current (8.3ms) single half sine-wave
superimposed on rated load
Symbol
VRRM
VRMS
VDC
IF(AV)
IFSM
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameters
Maximum DC forward voltage drop @ 1.0A DC
Maximum DC reverse current @ rated DC blocking TA = 250C
voltage
TA = 1000C
Maximum reverse recovery time
Symbol
VF
IR
tRR
Thermal and Mechanical Specifications (TA = 250C unless otherwise specified)
Parameters
Symbol
Typical thermal resistance, junction to ambient
RθJA
Operating and Storage temperature range
TJ , TStg
DO-41
BA159
1000
700
1000
1.0
30
Units
V
V
V
A
A
BA159
1.2
5.0
50
500
Units
V
µA
ns
Values
65
- 65 to + 150
Units
0C/W
0C
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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