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Datasheet 40NSF Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 40NSF | Fast Recovery Diode, Rectifier Naina Semiconductor emiconductor Ltd.
Fast Recovery Diodes (Stud Version)
Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic
40NSF(R)
Electrical Specifications (TE = 250C, unless otherwise noted)
Symbol IF(AV) VFM IF | Naina Semiconductor | diode |
2 | 40NSFR | Fast Recovery Diode, Rectifier Naina Semiconductor emiconductor Ltd.
Fast Recovery Diodes (Stud Version)
Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic
40NSF(R)
Electrical Specifications (TE = 250C, unless otherwise noted)
Symbol IF(AV) VFM IF | Naina Semiconductor | diode |
40N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 40N03GP | N-channel Enhancement-mode Power MOSFET Advanced Power Electronics Corp.
AP40N03GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge
D
Fast Switching Performance RoHS-compliant, halogen-free
G
S
BV DSS RDS(ON) ID
30V 17mΩ
40A
Description
Advanced Power MOSFETs from APEC provide the designer Advanced Power Electronics mosfet | | |
2 | 40N03P | SSM40N03P SSM40N03P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate charge Simple drive requirement Fast switching
G D S
BVDSS R DS(ON) ID
TO-220
30V 17mΩ 40A
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low Silicon Standard data | | |
3 | 40N05 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N05
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.035Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conve Inchange Semiconductor mosfet | | |
4 | 40N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N06
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.035Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conve Inchange Semiconductor mosfet | | |
5 | 40N06 | DTU40N06 N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
www.din-tek.jp
DTU40N06
FEATURES
ID (A)
40
rDS(on) (W)
0.016 @ VGS = 10 V
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
TO-252
D
G G D S
Top View S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C Din-Tek data | | |
6 | 40N10 | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 40N10
ITO-220AB 40N10F
TO-263 40N10B
TO-262 40N10H
Absolute Maximum Ratings(TC=2 CHONGQING PINGYANG mosfet | | |
7 | 40N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N10
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conve Inchange Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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