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PDF 56NT Data sheet ( Hoja de datos )

Número de pieza 56NT
Descripción Silicon Controlled Rectifiers
Fabricantes Naina Semiconductor 
Logotipo Naina Semiconductor Logotipo



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No Preview Available ! 56NT Hoja de datos, Descripción, Manual

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Naina Semiconductor Ltd.
56NT
Phase Control Thyristors, 56A (Stud and Lead Type)
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Metric thread type available
Low thermal resistance
Electrical Ratings (TJ = 250C, unless otherwise noted)
Parameters
Maximum on-state average current 180O
sinusoidal conduction @ TJ = 850C
Symbol
IT(AV)
Values
55
Maximum RMS on-state current
IT(RMS)
Maximum peak, one cycle non-repetitive
surge current
ITSM
900
Maximum I2t for fusing
I2t 800
Maximum repetitive peak on and off-state
voltage range
Maximum peak on-state voltage (TJ = 250C,
Ipeak = 79A)
VRRM,
VDRM
VTM
200 to
1600
1.2
Maximum holding current @ TJ
IH 150
Maximum latching current @TJ
IL 400
Maximum rate of rise of turn-on current,
VDRM ≤ 600V
di/dt
200
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
100% VDRM
TJ = TJ maximum,
67% VDRM
dv/dt
100
300
Maximum gate
current required to
trigger
anode supply 6 V
resistive load @TJ
IGT
100
Maximum gate
voltage required to
trigger
VGT 2.0
Units
A
A
A
A2s
V
V
mA
mA
A/µs
V/µs
mA
V
TO-208AC (TO-65) & TO-209AC (TO-94)
Thermal and Mechanical Specifications (TJ = 250C, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Mounting torque
TJ
TStg
Rth(JC)
Approximate weight
Values
- 60 to +125
- 60 to +125
0.6
0.2(min) to 0.3(max)
14
Units
0C
0C
0C/W
mkg
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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