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부품번호 35MB
기능 Single Phase Bridge Rectifier
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35MB 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Naina Semiconductor Ltd.
Single Phase Bridge Rectifier
Features
Glass passivated chip junction
Surge capability of 400 A
High efficiency
Electrically isolated metal case for maximum heat dissipation
Mounting: thru hole for # 8 screw
Thermal and Mechanical Specifications (TA = 250C unless otherwise
noted)
Parameters
Symbol Values Units
Maximum operating junction
temperature range
TJ
- 55 to +
125
0C
Maximum storage temperature
range
TStg
- 55 to +
150
0C
Approximate weight
WT 30 g
35MB
GBPC
Voltage Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol
35MB
Units
Maximum repetitive peak reverse
voltage
VRRM 50 100 200 400 600 800 1000
V
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700
V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
current
IF(AV)
35.0
A
Peak forward surge current (10ms)
single half sine-wave superimposed
on rated load
IFSM
400 A
Maximum DC forward voltage drop
per element @ 7.5 A
VF
1.2 V
Maximum DC reverse
current at rated DC
blocking voltage per
element
TA =
250C
TA =
1250C
IR
5.0
µA
500
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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