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PDF 56NTD Data sheet ( Hoja de datos )
| Número de pieza | 56NTD | |
| Descripción | Thyristor-Diode Modules | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
Thyristor – Diode Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ TJ =
850C
IF(AV)
56
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
Maximum I2t for fusing @ t = 10ms
IF(RMS)
IFSM
I2t
130
1300
8000
Units
A
A
A
A2s
56NTD
M1 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
Values
-65 to +125
0.55
Units
0C
0C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
Values
56
200 to 1600
1.2
100
2
5 to 100
400
300
2500
Units
A
V
V
A
V
mA
mA
V/µs
V
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 56NTD.PDF ] | |
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