PDF EM68916DVAA Data sheet ( Hoja de datos )

Número de pieza	EM68916DVAA
Descripción	8M x 16 Mobile DDR Synchronous DRAM
Fabricantes	Etron Technology
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No Preview Available ! www.DataSheet.co.kr EtronTech EM68916DVAA 8M x 16 Mobile DDR Synchronous DRAM (SDRAM) Etron Confidential Advanced (Rev. 1.0 Apr. /2009) Features • Fast clock rate: 166/133 MHz • Differential Clock CK & CK • Bi-directional DQS • Four internal banks, 2M x 16-bit for each bank • Edge-aligned with read data, centered in write data • Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, or 8 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) • Individual byte writes mask control • DM Write Latency = 0 • Precharge Standby Current = 100 µA • Self Refresh Current = 200 µA • Deep power-down Current = 10 µA max. at 85 • Auto Refresh and Self Refresh • 4096 refresh cycles / 64ms • No DLL (Delay Lock Loop), to reduce power; CK to DQS is not synchronized. • Power supplies: VDD & VDDQ = +1.8V+0.15V/-0.1V • Interface: LVCMOS • Ambient Temperature TA = -25 ~ 85 , • 60-ball 8mm x 10mm VFBGA package - Pb free and Halogen free Table 1. Ordering Information Part Number Clock Frequency Data Rate IDD6 Package EM68916DVAA-6H 166MHz 333Mbps/pin 200 µA VFBGA EM68916DVAA-75H 133MHz 266Mbps/pin 200 µA VFBGA VA: indicates VFBGA package A: indicates Generation Code H: indicates Pb and Halogen Free for VFBGA Package Figure 1. Ball Assignment (Top View) 123 A VSS DQ15 VSSQ B VDDQ DQ13 DQ14 C VSSQ DQ11 DQ12 D VDDQ DQ9 DQ10 E VSSQ UDQS F VSS UDM G CKE CK H A9 A11 DQ8 NC CK NC J A6 K VSS A7 A4 A8 A5 7 VDDQ 8 DQ0 9 VDD DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 LDQS VDDQ NC LDM VDD WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD Overview The EM68916D is 134,217,728 bits of double data rate synchronous DRAM organized as 4 banks of 2,097,152 words by 16 bits. The synchronous operation with Data Strobe allows extremely high performance. EM68916D is applied to reduce leakage and refresh currents while achieving very high speed. I/O transactions are possible on both edges of the clock. The ranges of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. Etron Technology, Inc. No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc. reserves the right to change products or specification without notice. Datasheet pdf - http://www.DataSheet4U.net/ 1 page www.DataSheet.co.kr EtronTech EM68916DVAA Operation Mode Fully synchronous operations are performed to latch the commands at the positive edges of CK. Table 3 shows the truth table for the operation commands. Table 3. Truth Table (Note (1), (2)) Command State CKEn-1 CKEn DM BA1 BA0 A10 A11, A9-0 CS RAS CAS WE BankActivate Idle(3) H X X V V Row Address L L H H BankPrecharge Any H X X V V L X LL HL PrechargeAll Any H X X X X H X LL HL Write Write and AutoPrecharge Read Read and Autoprecharge Active(3) H X V V V L LH L L Active(3) H X VV V H Column Address L H LL Active(3) H X X V V L A0~A8 L H L H Active(3) H X X V V H LH LH Mode Register Set Extended Mode Register Set Idle Idle H X XL L H X XH L OP code LL LL LL LL No-Operation Any H X X X X X X LH HH Device Deselect Any H X X X X X X H X X X Burst Stop Active(4) H X X X X X X LH HL AutoRefresh Idle H H X X X X X LL LH SelfRefresh Entry Idle H L X X X X X LL LH SelfRefresh Exit Idle (Self Refresh) L H XX X X X HX LH XX HH Power Down Mode Entry Idle/Active(5 ) H L XX X X X HX LH XX HH Power Down Mode Exit Any (Power Down) L H XX X X X HX LH XX HH Deep Power Down Entry Any H L X X X X X LH HL Deep Power Down Exit Any L H X X X X X H X X X Data Write Enable Active H X LX X X X XX XX Data Mask Disable Active H X HX X X X XX Note: 1. V = Valid data, X = Don't Care, L = Low level, H = High level 2. CKEn signal is input level when commands are provided. CKEn-1 signal is input level one clock cycle before the commands are provided. 3. These are states of bank designated by BA0, BA1signals. 4. Read burst stop with BST command for all burst types. 5. Power Down Mode can not enter in the burst operation. When this command is asserted in the burst cycle, device state is clock suspend mode. XX Etron Confidential 5 Rev. 1.0 Apr. 2009 Datasheet pdf - http://www.DataSheet4U.net/ 5 Page www.DataSheet.co.kr EtronTech EM68916DVAA Write Interrupted by Write A Burst Write can be interrupted by the new Write command before completion of the previous Burst Write, with the only restriction being that the interval that separates the commands must be at least one clock cycle. When the previous burst is interrupted, the remaining addresses are overridden by the new addresses and the new data will be written into the device until the programmed Burst Length is satisfied. Write Interrupted by Read & DM A Burst Write can be interrupted by a Read command to any bank. The DQ must be in the high impedance state at least one clock cycle before the interrupting read data appears on the outputs to avoid data contention. When the Read command is to be asserted, any residual data from the Burst Write sequence must be masked by DM. The delay from the last data to the Read command (tWTR) is required to avoid data contention inside the DRAM. Data presented on the DQ pins before the Read command is initiated will actually be written to the memory. A Read command interrupting a write sequence can not be issued at the next clock edge following the Write command. Write Interrupted by Precharge & DM A Burst Write can be interrupted by a Precharge of the same bank before completion of the previous burst. A write recovery time (tWR) is required from the last data to the Precharge command. When the Precharge command is asserted, any residual data from the Burst Write cycle must be masked by DM. z Burst Stop Command The Burst Stop command is initiated by having RAS and CAS High with CS and WE Low at the rising edge of the clock only. The Burst Stop command has the fewest restrictions, making it the easiest method to use when terminating a burst operation before it has been completed. When the Burst Stop command is issued during a Burst Read cycle, both the data and DQS (Data Strobe) go to a high impedance state after a delay which is equal to the CAS latency set in the Mode Register. The Burst Stop command, however, is not supported during a Burst Write operation. z DM Masking Function The DDR SDRAM has a Data Mask function that can be used in conjunction with the data write cycle only, not the read cycle. When the Data Mask is activated (DM High) during a write operation, the write data is masked immediately (DM to Data Mask latency is zero). DM must be issued at the rising edge or the falling edge of Data Strobe instead of at a clock edge. z Auto Precharge Operation Auto Precharge is a feature which performs the same individual bank precharge function as described above, but without requiring an explicit command. This is accomplished by using A10 (A10 = High), to enable Auto Precharge in conjunction with a specific READ or WRITE command. A precharge of the bank / row that is addressed with the READ or WRITE command is automatically performed upon completion of the read or write burst. Auto Precharge is non persistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto Precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharging time (tRP) is completed. When the Auto Precharge command is activated, the active bank automatically begins to precharge at the earliest possible moment during a read or write cycle after tRAS (min) is satisfied. z Precharge Command The Precharge command is issued when CS , RAS , and WE are Low and CAS is High at the rising edge of the clock (CK). The Precharge command can be used to precharge any bank individually or all banks simultaneously. The Bank Select addresses (BA0, BA1) are used to define which bank is precharged when the command is initiated. For a write cycle, tWR (min) must be satisfied from the start of the last Burst Write cycle until the Precharge command can be issued. After tRP from the precharge, an Active command to the same bank can be initiated. Etron Confidential 11 Rev. 1.0 Apr. 2009 Datasheet pdf - http://www.DataSheet4U.net/ 11 Page

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