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PDF MRFE6VP5600HR6 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6VP5600HR6 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type
Pout
(W)
f Gps ηD IRL
(MHz) (dB) (%) (dB)
Pulsed (100 μsec,
20% Duty Cycle)
600 Peak
230
25.0 74.6
--18
CW
600 Avg.
230
24.6 75.2
--17
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
• 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Document Number: MRFE6VP5600H
Rev. 1, 1/2011
MRFE6VP5600HR6
MRFE6VP5600HSR6
1.8--600 MHz, 600 W CW, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP5600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP5600HSR6
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature (1,2)
Symbol
VDSS
VGS
Tstg
TC
PD
TJ
Value
--0.5, +130
--6.0, +10
-- 65 to +150
150
1667
8.33
225
Unit
Vdc
Vdc
°C
°C
W
W/°C
°C
RFin/VGS 3
1 RFout/VDS
RFin/VGS 4
2 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
ZθJC
RθJC
0.022
0.12
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
°C/W
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
1
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TYPICAL CHARACTERISTICS
1000
Ciss
100 Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
1
0 10 20 30 40 50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 3. Capacitance versus Drain--Source Voltage
64
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
63 Pulse Width = 100 μsec, 20% Duty Cycle
62
P3dB = 58.3 dBm (679 W)
61 P2dB = 58.2 dBm (664 W)
60
P1dB = 58.0 dBm
59 (632 W)
58
Ideal
Actual
57
31 32 33 34 35 36 37
Pin, INPUT POWER (dBm) PULSED
Figure 4. Pulsed Output Power versus
Input Power
27
26
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
25
24 Gps
90
80
70
60
23 50
22
21 ηD
40
30
20
40 100
20
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
27
26
VPDulDse=W50idVthdc=,
1ID0Q0
= 100
μsec,
mA, f = 230 MHz
20% Duty Cycle
25
24
23
22
21 50 V
20 45 V
19 40 V
18 35 V
17 VDD = 30 V
0 100 200 300 400 500 600 700
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
90
80
VDD = 30 V 35 V
40 V 45 V 50 V
70
60
50
40
30
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
20
0 100 200 300 400 500 600 700
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Drain Efficiency versus
Output Power
27
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
26 Pulse Width = 100 μsec, 20% Duty Cycle
25
24 TC = --30_C
23 25_C
Gps
25_C
90
80
85_C
--30_C 70
60
50
22
21 85_C
ηD
40
30
20
40 100
20
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
5
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5 Page 
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RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
11
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