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PDF MRFE6VP6300HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6VP6300HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Document Number: MRFE6VP6300H
Rev. 1, 7/2011
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type
Pout
(W)
f Gps ηD IRL
(MHz) (dB) (%) (dB)
Pulsed (100 μsec,
20% Duty Cycle)
300 Peak
230
26.5 74.0
--16
MRFE6VP6300HR3
MRFE6VP6300HSR3
1.8--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CW
300 Avg.
130
25.0 80.0
--15
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
• 300 Watts CW Output Power
• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
• Capable of 300 Watts CW Operation
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
CASE 465M--01, STYLE 1
NI--780--4
MRFE6VP6300HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRFE6VP6300HSR3
RFin/VGS 3
1 RFout/VDS
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature (1,2)
Symbol
VDSS
VGS
Tstg
TC
PD
TJ
Value
--0.5, +130
--6.0, +10
--65 to +150
150
1050
5.26
225
Unit
Vdc
Vdc
°C
°C
W
W/°C
°C
RFin/VGS 4
2 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case (4)
Pulsed: Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle,
50 Vdc, IDQ = 100 mA, 230 MHz
CW: Case Temperature 87°C, 300 W CW, 50 Vdc, IDQ = 1100 mA, 230 MHz
ZθJC
RθJC
0.05
0.19
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Same test circuit is used for both pulsed and CW.
Unit
°C/W
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
1
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TYPICAL CHARACTERISTICS — PULSED
1000
100
10
Ciss
Coss
1 Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
0.1
0 10 20 30 40 50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
60
P3dB = 56.0 dBm (398 W)
59
P2dB = 55.8 dBm (380 W)
58
Ideal
57 P1dB = 55.4 dBm
(344 W)
56
55
Actual
54 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
53
26 27 28 29 30 31 32 33 34
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
29
28
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
27
90
80
70
26 60
25
Gps
24
50
40
23
ηD
22
20
100
30
20
600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
29
28
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
27
26
25
24 50 V
23
22
40 V 45 V
21 35 V
20 VDD = 30 V
19
0 50 100 150 200 250 300 350 400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
90
80
VDD = 30 V
35 V
40 V 45 V 50 V
70
60
50
40
30
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
20
0 50 100 150 200 250 300 350 400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Drain Efficiency versus
Output Power
29
28
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
27
Gps
26 25_C
25 TC = --30_C
24
85_C
90
25_C
80
--30_C 70
60
50
40
23 85_C
30
22
ηD
21
10
100
20
10
600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
5
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RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
11
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