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부품번호 | TLP705 기능 |
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기능 | Industrial Inverter IGBT/Power MOS FET Gate Drive | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet.co.kr
Preliminary
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705
Plasma Display Panel.
Industrial Inverter
IGBT/Power MOS FET Gate Drive
4.58±0.25
654
TLP705
Unit in mm
The TOSHIBA TLP705 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8PIN DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lowr Power IGBTs.
• Peak output current
: ±0.45 A (max)
• Operating frequency
: 250kHz (max)
• Guaranteed performance over temperature : −40 to 100°C
• Supply current
• Power supply voltage
• Threshold input current
• Switching time (tpLH / tpHL)
• Common mode transient immunity
: 3mA (max)
: 10 to 20 V
: IFLH = 8 mA (max)
: 200 ns (max)
: 10 kV/µs
• Isolation voltage
: 5000 Vrms
• UL Recognized
• Construction Mechanical Rating
:UL1577, File No.E67349
7.62 mm pich
standard type
10.16 mm pich
TLPXXXF type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.4 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.4 mm (Min)
123
7.62±0.25
1.27±0.2
0.4±0.1
1.25±0.25
10.0max
TOSHIBA
11-5J1
Weight 0.26 g (t y p .)
11-5J1
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration (top view)
1
2
3 SHIELD
6 1: Anode
2: NC
3: Cathode
5 4: GND
5: VO (output)
4 6: VCC
1
Schematic
IF
1+
VF
3−
ICC 6
(Tr1)
VCC
IO 5
(Tr2)
VO
SHIELD
4
GND
A 0.1 µF bypass capacitor must be connected
between pin 6 and 4. (See Note 6)
2004-10-19
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
TLP705
Switching Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Characteristics
Propagation delay time
Propagation delay time
L→H
H→L
L→H
H→L
Propagation delay difference
between any two parts or channels
Pulse Width Distortion
Symbol
Test
Circuit
Test Condition
tpLH
tpHL
tpLH
tpHL
tpsk
PWD
(tpHL-tpLH)
VCC = 20 V
Rg = 30 Ω
7 Cg = 1 nF
f=250kHz
Duty Cycle
=50%
Ta= 25
IF = 0 10 mA
Ta= 25
IF = 10→ 0 mA
Ta= -40 to100
IF = 0 10 mA
Ta= -40 to100
IF = 10 0 mA
Ta= -40 to100
IF = 10 mA
Ta= -40 to100
IF = 10 mA
Min
70
70
50
50
-90
-65
Typ.* Max Unit
95 170
105 170
200
200
ns
90
65
Output rise time (10-90%)
tr
IF = 0 → 10 mA
Output fall time (90-10%)
Common mode transient immunity
at hight level output
Common mode transient immunity
at low level output
tf
CMH
CML
VCM =
8 1000Vp-p
VCC = 20 V
Ta = 25°C
IF = 10 → 0 mA
IF = 10 mA
VO (min) = 16 V
IF = 0 mA
VO (max) = 1 V
−10000
10000
V/µs
*: All typical values are at Ta = 25°C
Test Circuit 1: IOPH
1
IF
6
V6-5
A IOPH
VCC
34
Test Circuit 2: IOPL
16
IOPL
A
VCC
V5-4
34
Test Circuit 3: VOH
1 6 VOH
V
IF
34
VCC
Test Circuit 4: VOL
16
VF
3
VOL
V
4
VCC
4 2004-10-19
Datasheet pdf - http://www.DataSheet4U.net/
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TLP700 | GaAAs IRED + Photo IC | Toshiba Semiconductor |
TLP700F | GaAAs IRED + Photo IC | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |