|
|
|
부품번호 | BGU7007 기능 |
|
|
기능 | Low Noise Amplifier MMIC | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 19 페이지수
BGU7007
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo
and Compass
Rev. 3 — 29 March 2012
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BGU7007 is a Low Noise Amplifier (LNA) for GNSS receiver applications in a plastic
leadless 6-pin, extremely small SOT886 package. The BGU7007 requires only one
external matching inductor and one external decoupling capacitor.
The BGU7007 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance when jamming signals from co-existing cellular
transmitters are present. At low jamming power levels it delivers 18.5 dB gain at a noise
figure of 0.85 dB. During high jamming power levels, resulting for example from a cellular
transmit burst, it temporarily increases its bias current to improve sensitivity.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Covers full GNSS L1 band, from 1559 MHz to 1610 MHz
Noise figure (NF) = 0.85 dB
Gain 18.5 dB
High input1 dB compression point Pi (1dB) of 12 dBm
High out of band IP3i of 4 dBm
Supply voltage 1.5 V to 3.1 V
Power-down mode current consumption < 1 A
Optimized performance at low supply current of 4.8 mA
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor and one supply decoupling capacitor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Small 6-pin leadless package 1 mm 1.45 mm 0.5 mm
110 GHz transit frequency - SiGe:C technology
NXP Semiconductors
BGU7007
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
7. Characteristics
Table 7. Characteristics
f = 1559 MHz to 1610 MHz; VCC = 1.8 V; VENABLE >= 0.8 V; Pi < 40 dBm; Tamb = 25 C; input matched to 50 using a
5.6 nH inductor; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC supply voltage
ICC supply current
Tamb
Gp
ambient temperature
power gain
RLin input return loss
RLout output return loss
ISL isolation
RF input AC coupled
VENABLE 0.8 V
Pi < 40 dBm
Pi = 20 dBm
VENABLE 0.35 V
Tamb = 25 C
Pi < 40 dBm, no jammer
Pi = 20 dBm, no jammer
Pjam = 20 dBm; fjam = 850 MHz
Pjam = 20 dBm; fjam = 1850 MHz
40 C Tamb +85 C
Pi < 40 dBm, no jammer
Pi = 20 dBm, no jammer
Pjam = 20 dBm; fjam = 850 MHz
Pjam = 20 dBm; fjam = 1850 MHz
Pi < 40 dBm
Pi = 20 dBm
Pi < 40 dBm
Pi = 20 dBm
1.5 - 3.1 V
3.4 4.8 6.1
8.9 12.8 15.9
--1
40 +25 +85
mA
mA
A
C
16.5 18.5 20.5
17.5 19.5 21.5
17.5 19.5 21.5
17.5 19.5 21.5
dB
dB
dB
dB
16 - 21
17 - 22
17 - 22
17 - 22
57-
7 10 -
12 18 -
15 24 -
22 24 -
dB
dB
dB
dB
dB
dB
dB
dB
dB
NF noise figure
Tamb = 25 C
Pi < 40 dBm, no jammer
Pi < 40 dBm, no jammer
Pi = 20 dBm, no jammer
Pjam = 20 dBm; fjam = 850 MHz
Pjam = 20 dBm; fjam = 1850 MHz
40 C Tamb +85 C
Pi < 40 dBm, no jammer
Pi = 20 dBm, no jammer
Pjam = 20 dBm; fjam = 850 MHz
Pjam = 20 dBm; fjam = 1850 MHz
[1] -
0.85 1.2 dB
[2] -
0.90 1.3 dB
- 1.2 1.6 dB
- 1.1 1.5 dB
- 1.3 1.7 dB
- - 1.7 dB
- - 1.9 dB
- - 1.8 dB
- - 2.0 dB
BGU7007
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 March 2012
© NXP B.V. 2012. All rights reserved.
4 of 19
4페이지 NXP Semiconductors
BGU7007
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
20
Gp
(dB)
16
001aao160
12
(1)
(2)
8
(3)
4
0
500
1000 1500 2000
VCC = 1.8 V; Pi = 45 dBm.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
2500 3000
f (MHz)
Fig 4. Power gain as a function of frequency;
typical values
20
Gp
(dB)
16
12
8
001aao162
(3)
(2)
(1)
4
0
500 1000 1500 2000 2500 3000
f (MHz)
Pi = 45 dBm; Tamb = 25 C.
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
Fig 6. Power gain as a function of frequency;
typical values
20
Gp
(dB)
16
001aao161
12
(4)
(3)
8 (2)
(1)
4
0
500 1000 1500 2000 2500 3000
f (MHz)
VCC = 1.8 V; Tamb = 25 C.
(1) Pi = 45 dBm
(2) Pi = 30 dBm
(3) Pi = 20 dBm
(4) Pi = 15 dBm
Fig 5. Power gain as a function of frequency;
typical values
22
Gp
(dB)
19
16
13
Gp
ICC
001aao163
25
ICC
(mA)
(3)
(2)
(1)
20
(3)
(2)
10
(1)
5
10 0
-50 -40 -30 -20 -10
0
Pi (dBm)
Tamb = 25 C; f = 1575 MHz.
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
Fig 7. Power gain as a function of input power;
typical values
BGU7007
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 March 2012
© NXP B.V. 2012. All rights reserved.
7 of 19
7페이지 | |||
구 성 | 총 19 페이지수 | ||
다운로드 | [ BGU7007.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BGU7003 | Wideband Silicon Germanium Low-noise Amplifier MMIC | NXP Semiconductors |
BGU7004 | SiGe:C Low Noise Amplifier MMIC | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |