2SC1318A Datasheet PDF - Panasonic Semiconductor
| Part Number | 2SC1318A | |
| Description | Silicon NPN epitaxial planer type(For low-frequency driver amplification) | |
| Manufacturers | Panasonic Semiconductor | |
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Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
80
70
5
1
0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1 µA
80 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
70
5
85 160 340
40 100
0.2 0.6
0.85 1.5
V
V
V
V
Transition frequency
fT VCB = 10V, IE = –50mA, f = 200MHz
120 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC1318A electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2SC1318A.PDF Datasheet ] | |
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