(PDF) BU606 Datasheet - Silicon NPN Power Transistor

Número de pieza	BU606
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! www.DataSheet.co.kr INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU606 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 7A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IBB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 4 90 150 -65~150 A W ℃ ℃ isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF BU606 Data sheet ( Hoja de datos )