(PDF) BUP23C Datasheet - Silicon NPN Power Transistor

Número de pieza	BUP23C
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! www.DataSheet.co.kr INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUP23B 450V (Min)-BUP23C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) BUP23B BUP23C 750 850 V VCEO Collector-Emitter Voltage BUP23B BUP23C 400 450 V VEBO Emitter-Base Voltage 9V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IBB Base Current- Continuous 6A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 9 125 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Product Specification BUP23B/C isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF BUP23C Data sheet ( Hoja de datos )