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Sanyo Semicon Device에서 제조한 전자 부품 VEC2601은 전자 산업 및 응용 분야에서
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부품번호 VEC2601 기능
기능 N-Channel and P-Channel Silicon MOSFETs
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VEC2601 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Ordering number : ENA0933
VEC2601
SANYO Semiconductors
DATA SHEET
VEC2601
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
P-channel MOSFET enables high-density mounting.
Best suited for load switches.
2.5V drive.
0.75mm mount high.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : BD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
N-channel
P-channel
30 --20
±10 ±10
0.15 --3
0.6 --12
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
0.4 1.3 V
0.15
0.22
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91207PE TI IM TC-00000864 No. A0933-1/6
Datasheet pdf - http://www.DataSheet4U.net/




VEC2601 pdf, 반도체, 판매, 대치품
www.DataSheet.co.kr
VEC2601
RDS(on) -- Ta
[Nch]
7 1.0
7
65
yfs-- ID
[Nch]
VDS=10V
5
4
V GS=2.5V, I D=40mA
3 VGS=4.0V, ID=80mA
2
3
2
Ta= --25°C
75°C
0.1
7
5
3
25°C
12
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00035
IS -- VSD
[Nch]
1.0
7 VGS=0V
5
3
2
0.1
7
5
3
2
0.01
0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 0.1
23
Drain Current, ID -- A
SW Time -- ID
5 7 1.0
IT00036
[Nch]
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
0.01
0.5
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
IT00037
Ciss, Coss, Crss -- VDS [Nch]
f=1MHz
10
Ciss
7
5 Coss
3
2 Crss
1.0
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT00039
ASO
[Nch]
2
1.0
7
IDP=0.6A
5
3
2 ID=0.15A
0.1
7
5
3
2
PW10µs
100m10sm1sms
(TaD=2C5o°Cpe)ration
0.01 Operation in this
7 area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
0.001 Mounted on a ceramic board (900mm20.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
Drain-to-Source Voltage, VDS -- V IT12926
10
0.01
2
10
VDS=10V
9 ID=150mA
8
3 5 7 0.1
Drain Current, ID -- A
VGS -- Qg
2
IT00038
[Nch]
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
No. A0933-4/6
Datasheet pdf - http://www.DataSheet4U.net/

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