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부품번호 | VEC2812 기능 |
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기능 | N-Channel Silicon MOSFET / Schottky Barrier Diode | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
전체 6 페이지수
www.DataSheet.co.kr
Ordering number : ENA0392
VEC2812
SANYO Semiconductors
DATA SHEET
VEC2812
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : BZ
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Ratings
Unit
20
±10
1.5
6
0.8
150
--55 to +125
V
V
A
A
W
°C
°C
30
35
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806PE SY IM TC-00000280 No. A0392-1/6
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEC2812
yfs -- ID
[MOSFET]
10
7 VDS=10V
5
3
2 25°C
1.0
7
5
3
Ta= --25°C75°C
2
0.1
7
5
3
2
0.01
0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
100
7
VDD=10V
VGS=4V
5
Drain Current, ID -- A
SW Time -- ID
IT02905
[MOSFET]
3
td(off)
2
10 tf
7 td(on)
5
3
2
1.0
0.1
2
10
VDS=10V
9 ID=1.5A
8
3 5 7 1.0
Drain Current, ID -- A
VGS -- Qg
23
5
IT02907
[MOSFET]
7
6
5
4
3
2
1
0
012345
Total Gate Charge, Qg -- nC
IT07692
PD -- Ta
[MOSFET]
1.0
IS -- VSD
[MOSFET]
10
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT02906
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
3
2
Ciss
100
7
5
3 Coss
2
Crss
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT02908
ASO
[MOSFET]
10
7
IDP=6A
≤10µs
5
3
2 ID=1.5A
1.0
7
5
3
2
10ms
DC operation
0.1 Operation in this
7
5
area is limited by RDS(on).
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
5
Drain-to-Source Voltage, VDS -- V IT09925
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm) 1unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09926
No. A0392-4/6
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
VEC2811 | P-Channel Silicon MOSFET / Schottky Barrier Diode | Sanyo Semicon Device |
VEC2812 | N-Channel Silicon MOSFET / Schottky Barrier Diode | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |