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부품번호 | VEC2813 기능 |
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기능 | N-Channel Silicon MOSFET / Schottky Barrier Diode | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
www.DataSheet.co.kr
Ordering number : ENA0384A
VEC2813
SANYO Semiconductors
DATA SHEET
VEC2813
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : CB
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
20
±10
3
12
0.8
150
--55 to +125
V
V
A
A
W
°C
°C
30
30
2
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106 SY IM TC-00000299 / 70306 / 52506PE MS IM TB-00002333 No. A0384-1/6
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEC2813
3
2 VDS=10V
yfs -- ID
[MOSFET]
10
7
5
3
2
Ta= --25°C
75°C
25°C
1.0
7
5
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
IT10937
SW Time -- ID [MOSFET]
3
2
VDD=10V
VGS=4V
100
7 tr
5 td(off)
tf
3
2 td(on)
10
7
5
3
2
1.0
0.1
23
4.0
VDS=10V
3.5 ID=3A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT03496
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT03498
PD -- Ta
[MOSFET]
1.0
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
1000
7
5
3
2
IS -- VSD
[MOSFET]
VGS=0V
0.2 0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT10938
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
Ciss
100
7 Coss
5 Crss
3
2
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT03497
ASO
[MOSFET]
3
2 IDP=12A
PW≤10µs
10
7
5 ID=3A
3
2
1.0
7
5
3
1ms100µs
DC oper1a0ti0omn10sms
2 Operation in this
0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
23
Drain-to-Source Voltage, VDS -- V IT10952
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm) 1unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10953
No. A0384-4/6
Datasheet pdf - http://www.DataSheet4U.net/
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |