|
|
|
부품번호 | VEC2815 기능 |
|
|
기능 | P-Channel Silicon MOSFET / Schottky Barrier Diode | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
전체 6 페이지수
www.DataSheet.co.kr
Ordering number : ENA0559
VEC2815
SANYO Semiconductors
DATA SHEET
VEC2815
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• DC/DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 4V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : CL
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--30
±20
--3
--12
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
30
30
3
20
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2906PE TI IM TC-00000344 No.A0559-1/6
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEC2815
yfs -- ID
[MOSFET]
10
VDS= --10V
7
5
3
2
Ta= --25°C 75°C
1.0 25°C
7
5
3
--0.1
23
5 7 --1.0
2
Drain Current, ID -- A
SW Time -- ID
2
VDD= --15V
100 VGS= --10V
7 td(off)
5
tf
3
2
td(on)
10
7 tr
5
3
2
3 57
IT07771
[MOSFET]
1.0
--0.1
23
5 7 --1.0
2
--10
VDS= --10V
Drain Current, ID -- A
VGS -- Qg
--9 ID= --3A
--8
3 57
IT07773
[MOSFET]
--7
--6
--5
--4
--3
--2
--1
0
0 2 4 6 8 10 12 14
Total Gate Charge, Qg -- nC
IT07775
PD -- Ta
[MOSFET]
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2✕0.8mm) 1unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09303
--10
7 VGS=0V
5
3
2
IS -- VSD
[MOSFET]
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.3
1000
7
5
--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Diode Forward Voltage, VSD -- V IT07772
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
Ciss
3
2
Coss
100
7 Crss
5
3
2
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT07774
ASO
[MOSFET]
3
2 IDP= --12A
PW≤10µs
--10
7
5 ID= --3A
3
2
--1.0
7
5
3
1ms
DC
100ms10ms
operation
2
Operation in this
--0.1
7
area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
5
Drain-to-Source Voltage, VDS -- V IT09302
No.A0559-4/6
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ VEC2815.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VEC2811 | P-Channel Silicon MOSFET / Schottky Barrier Diode | Sanyo Semicon Device |
VEC2812 | N-Channel Silicon MOSFET / Schottky Barrier Diode | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |