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PDF VEC2820 Data sheet ( Hoja de datos )
| Número de pieza | VEC2820 | |
| Descripción | N-Channel Silicon MOSFET / Schottky Barrier Diode | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENA0849
VEC2820
SANYO Semiconductors
DATA SHEET
VEC2820
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one
package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Marking : CU
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Ratings
Unit
20 V
±10 V
3A
12 A
0.9 W
150 °C
--55 to +125
°C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60607PE TI IM TC-00000736 No. A0849-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
VEC2820
PD -- Ta
[MOSFET]
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2✕0.8mm) 1unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12457
IF -- VF
[SBD]
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1 0.2 0.3 0.4 0.5
Forward Voltage, VF -- V
IT07150
PF(AV) -- IO
[SBD]
0.7
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.6 (3)Rectangular wave θ=180°
(2) (4)(3)
(1)
(4)Sine wave θ=180°
0.5
0.4
Rectangular wave
0.3
0.2 θ
360°
Sine wave
0.1
180°
0 360°
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Average Output Current, IO -- A IT07152
12
IFSM -- t
[SBD]
Current waveform 50Hz sine wave
10 IS
20ms
8t
100000
10000
1000
100
10
1.0
0.1
0.01
0
2
100
7
5
3
2
10
0.1
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
--25°C
[SBD]
5 10
Reverse Voltage, VR -- V
C -- VR
15
IT07151
[SBD]
f=1MHz
2 3 5 7 1.0
23
5 7 10
2
Reverse Voltage, VR -- V
IT07153
6
4
2
0
7 0.01
23
5 7 0.1
23
Time, t -- s
5 7 1.0
23
IT00626
No. A0849-5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VEC2820.PDF ] | |
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