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부품번호 | VEC2822 기능 |
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기능 | P-Channel Silicon MOSFET / Schottky Barrier Diode | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
www.DataSheet.co.kr
Ordering number : ENA0961
VEC2822
SANYO Semiconductors
DATA SHEET
VEC2822
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• DC / DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Low switching noise.
• Low leakage current and high reliability due to planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Marking : CY
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
Ratings
Unit
--20
±10
--3.5
--14
1.0
150
--55 to +125
V
V
A
A
W
°C
°C
15 V
17 V
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0307PE TI IM TC-00000899 No. A0961-1/6
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEC2822
⏐yfs⏐ -- ID
[MOSFET]
3
VDS= --10V
2
10
7
5 Ta= --25°C 75°C
3
2 25°C
1.0
7
--0.1
5
3
2
23
5 7 --1.0
23
5 7 --10
Drain Current, ID -- A
SW Time -- ID
IT06420
[MOSFET]
VDD= --10V
VGS= --4.5V
100 td(off)
7 tf
5
tr
3
2
td(on)
10
7
5
--0.1
23
5 7 --1.0
2
--4.5
VDS= --10V
--4.0 ID= --3.5A
Drain Current, ID -- A
VGS -- Qg
--3.5
3 57
IT06422
[MOSFET]
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1.2
2 4 6 8 10
Total Gate Charge, Qg -- nC
IT13025
PD -- Ta
[MOSFET]
IS -- VSD
[MOSFET]
--10
7
5
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
2
--0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Diode Forward Voltage, VSD -- V IT06421
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
1000
7
5
Ciss
3
2
Coss
100 Crss
7
5
3
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain-to-Source Voltage, VDS -- V IT06423
ASO
[MOSFET]
3
2 IDP= --14A
PW≤10µs
--10
7
5 ID= --3.5A
3
10ms 1m10s0µs
2
--1.0
7
5
3
2
Operation in this
area is limited by
DC operation
RDS(on).
100ms
(Ta=25°C)
--0.1
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V IT13019
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (1200mm 2✕0.8mm) 1unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13020
No. A0961-4/6
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
VEC2820 | N-Channel Silicon MOSFET / Schottky Barrier Diode | Sanyo Semicon Device |
VEC2822 | P-Channel Silicon MOSFET / Schottky Barrier Diode | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |