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PDF GA100NA60UP Data sheet ( Hoja de datos )
| Número de pieza | GA100NA60UP | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay Siliconix | |
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GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
SOT-227
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and speed 0 to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2500 V AC/RMS)
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial market
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
600 V
100 A
1.8 V
BENEFITS
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
VGE
VISOL
Maximum power dissipation
PD
Operating junction and storage
temperature range
Mounting torque
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Repetitive rating: VGE = 20 V; pulse width limited
by maximum junction temperature (fig. 20)
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
MAX.
600
100
50
200
200
± 20
2500
250
100
- 55 to + 150
6 to 32 or M3 screw
12
(1.3)
UNITS
V
A
V
W
°C
Ibf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, IGBT
Thermal resistance, junction to case, diode
Case to sink, flat, greased surface
Weight of module
RthJC
RthJC
RthCS
TYP.
-
-
0.05
30
MAX.
0.50
1.0
-
-
UNITS
°C/W
g
Document Number: 94543 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GA100NA60UP
Vishay Semiconductors
1000
100
100
TJ = 150°C
TJ = 125°C
TJ = 25°C
10
IF = 100A
IF = 50A
IF = 25A
10
1
0.0 0.4 0.8 1.2 1.6 2.0
Forwa rd V oltag e D ro p - V F M (V )
Fig. 12 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
150
IF = 100A
IF = 50A
IF = 25A
120
90
60
30
VR = 200V
TJ = 12 5°C
TJ = 2 5 °C
0
100
di f /dt - (A/μs)
1000
Fig. 13 - Typical Reverse Recovery vs. dIF/dt
VR = 2 00 V
TJ = 125°C
TJ = 25°C
1
100 1000
di f /dt - (A/μs)
Fig. 14 - Typical Recovery Current vs. dIF/dt
4000
VR = 200V
TJ = 12 5°C
TJ = 2 5 °C
3000
IF = 100A
IF = 50A
IF = 25A
2000
1000
0
100 1000
di f /dt - (A/µs)
Fig. 15 - Typical Stored Charge vs. dIF/dt
Document Number: 94543 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GA100NA60UP.PDF ] | |
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