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부품번호 | GB05XP120KTPBF 기능 |
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기능 | Three Phase Inverter Module | ||
제조업체 | Vishay Siliconix | ||
로고 | |||
전체 10 페이지수
www.DataSheet.co.kr
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED® Diodes, 5 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 100 °C
tsc at TJ = 150 °C
1200 V
2.90 V
5A
> 10 μs
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED® diode with ultrasoft reverse
recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
(including diode and IGBT)
ICM
ILM
IF
IFM
VGE
VISOL
PD
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
TC = 100 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
1200
12
5
24
24
5
12
± 20
2500
76
31
UNITS
V
A
V
W
Document Number: 93912 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB05XP120KTPbF
Vishay Semiconductors Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED® Diodes, 5 A
20
Ice=3A
Ice=6A
15 Ice=12A
10
5
1000
tF
100
tdOFF
tdON
10
tR
0
5 10 15 20
Vge (V)
Fig. 3 - Typical VCE vs. VGE
TJ = 25 °C
20
15
Ice=3A
Ice=6A
Ice=12A
10
1
3 6 9 12
Ic (A)
Fig. 6 - Typical Switching Time vs. IC
TJ = 125 °C, L = 2 mH, VCE = 600 V
Rg = 10 ; VGE = 15 V
1400
ETOT
1100
E OFF
800
5 500 EON
0
5 10 15 20
Vge (V)
Fig. 4 - Typical VCE vs. VGE
TJ = 125 °C
2500
2000
ETOT
1500
1000
500
EON
EOFF
0
3 6 9 12
Ic (A)
Fig. 5 - Typical Energy Loss vs. IC
TJ = 125 °C, L = 2 mH, VCE = 600 V
Rg = 10 ; VGE = 15 V
200
0
10 20 30 40 50
Rg ( )
Fig. 7 - Typical Energy Loss vs. Rg
TJ = 125 °C, L = 2 mH, VCE = 600 V
IC = 6 A; VGE = 15 V
1000
tF
tdOFF
100
tdON
tR
10
0 10 20 30 40 50
Rg ( )
Fig. 8 - Typical Switching Time vs. Rg
TJ = 125 °C, L = 2 mH, VCE = 600 V
IC = 6 A; VGE = 15 V
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 93912
Revision: 03-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 www.DataSheet.co.kr
GB05XP120KTPbF
Three Phase Inverter Module in MTP Package Vishay Semiconductors
1200 V NPT IGBT and HEXFRED® Diodes, 5 A
10
0.5
1 0.3
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
1E-05
1E-04
τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
0.660 0.00037
τ3τ3
0.536 0.001664
1.483 0.037405
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
1E-03
1E-02
1E-01
t1 , Rectangular Pulse Duration (sec)
1E+00
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
10
0.5
1 0.3
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
1E-05
1E-04
τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
τ3τ3
Ri (°C/W)
1.684
1.683
0.833
τi (sec)
0.001077
0.020815
0.040397
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
1E-03
1E-02
1E-01
t1 , Rectangular Pulse Duration (sec)
1E+00
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
Document Number: 93912 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
www.vishay.com
7
Datasheet pdf - http://www.DataSheet4U.net/
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GB05XP120KTPBF | Three Phase Inverter Module | Vishay Siliconix |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |