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부품번호 | GB150TS60NPBF 기능 |
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기능 | Ultrafast Speed IGBT | ||
제조업체 | Vishay Siliconix | ||
로고 | |||
전체 9 페이지수
www.DataSheet.co.kr
GB150TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 150 A, 25 °C
600 V
138 A
2.64 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
UNITS
V
A
V
W
V
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB150TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
200 1000
td(off)
150
td(on)
tf
100 100
50 Tj = 125°C
Tj = 25°C
0
0.0 0.5 1.0 1.5 2.0
VF (V)
Fig. 5 - Diode Forward Characteristics, tp = 500 μs
tr
10
0 40 80 120 160
IC (A)
Fig. 8 - Typical Switching Time vs. IC
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Rg = 10 Ω, VGE = 15 V
160
140
120
100
80 DC
60
40
20
0
0 40 80 120 160
Maximum DC Collector Current (A)
Fig. 6 - Maximum Collector Current vs.
Case Temperature
4500
4000
3500
3000 Eoff
2500
2000
1500
1000
Eon
500
0
0 50 100 150
IC (A)
Fig. 7 - Typical Energy Loss vs. IC
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Rg = 10 Ω, VGE = 15 V
9000
8000
7000
6000
5000
4000
Eoff
Eon
3000
2000
0
10 20 30 40 50
RG (Ω)
Fig. 9 - Typical Energy Loss vs. Rg
TJ = 125 °C, L = 200 μH, VCC = 360 V,
ICE = 150 A, VGE = 15 V
10000
1000
td(off)
td(on)
tr
100
tf
10
0
10 20 30 40 50
RG (Ω)
Fig. 10 - Typical Switching Time vs. Rg,
TJ = 125 °C, L = 200 μH, VCC = 360 V,
ICE = 150 A, VGE = 15 V
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 94502
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 www.DataSheet.co.kr
GB150TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 138 A
ORDERING INFORMATION TABLE
Device code
G B 150 T S 60 N PbF
1 2 3 4567
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Generation 5 NPT
3 - Current rating (150 = 150 A)
4 - Circuit configuration (T = Half-bridge)
5 - Package indicator (S = INT-A-PAK)
6 - Voltage rating (60 = 600 V)
7 - Speed/type (N = Ultrafast IGBT)
8 - Lead (Pb)-free
CIRCUIT CONFIGURATION
3
8
6
7
1
4
5
Dimensions
2
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95173
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
7
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
GB150TS60NPBF | Ultrafast Speed IGBT | Vishay Siliconix |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |