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부품번호 | GB50NA120UX 기능 |
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기능 | Ultrafast IGBT | ||
제조업체 | Vishay Siliconix | ||
로고 | |||
전체 10 페이지수
www.DataSheet.co.kr
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 50 A, 25 °C
1200 V
50 A at 92 °C
3.22 V
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
VCES
IC
ICM
ILM
IF
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
84
57
150
150
76
52
± 20
431
242
278
156
2500
UNITS
V
A
V
W
V
Document Number: 93101 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB50NA120UX
Vishay Semiconductors "High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
5.5
TJ = 25 °C
5.0
4.5
4.0
TJ = 125 °C
3.5
3.0
0.0002
0.0004
0.0006
0.0008
0.001
IC (mA)
Fig. 5 - Typical IGBT Threshold Voltage
200
175
150
125 TJ = 25 °C
100 TJ = 125 °C
75
50
25
0
0123456
VFM (V)
Fig. 8 - Typical Diode Forward Characteristics
64
5 100 A
4
50 A
3 25 A
3
Eon
2
Eoff
1
2
10 30 50 70 90 110 130 150
TJ (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80
IF - Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
0
10 20 30 40 50
1000
IC (A)
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
100
td(off)
td(on)
tf
tr
10
0
10 20 30 40 50 60
IC (A)
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 93101
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 www.DataSheet.co.kr
GB50NA120UX
"High Side Chopper" IGBT SOT-227 Vishay Semiconductors
(Ultrafast IGBT), 50 A
50 V
1000 V
1
L
VC *
D.U.T.
2
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
R = VCC
ICM
D.U.T.
Rg
+
- VCC
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
-+
-5V
Rg
L
D.U.T./
driver
+
-
VCC
Fig. 19a - Switching Loss Test Circuit
1
2
3
VC 90 %
10 %
90 %
td(off)
10 %
5%
IC
td(on)
tr
Eon
tf
Eoff
Ets = (Eon + Eoff)
Fig. 19b - Switching Loss Waveforms Test Circuit
t = 5 µs
Document Number: 93101 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
7
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
GB50NA120UX | Ultrafast IGBT | Vishay Siliconix |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |