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PDF GB50XF120K Data sheet ( Hoja de datos )
| Número de pieza | GB50XF120K | |
| Descripción | IGBT SIXPACK MODULE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IGBT SIXPACK MODULE
Features
Low VCE (on) Non Punch Through IGBT Technology
Low Diode VF
10µs Short Circuit Capability
Square RBSOA
HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
Positive VCE (on) Temperature Coefficient
Ceramic DBC Substrate
Low Stray Inductance Design
Benefits
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI, Requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Low Junction to Case Thermal Resistance
UL Approved E78996
ECONO2 6PACK
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25°C
IC @ Tc=80°C
ICM
ILM
IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
PD @ Tc=25°C
PD @ Tc=80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Pulsed Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT and Diode)
Maximum Power Dissipation (IGBT and Diode)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Bulletin PD - 94567 rev.B 08/03
GB50XF120K
VCES = 1200V
IC = 50A @ TC=80°C
tsc > 10µs @ TJ=150°C
VCE(on) typ. = 2.45V
Max.
1200
75
50
150
150
75
50
150
±20
329
184
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Thermal and Mechanical Characteristics
RθJC (IGBT)
RθJC (Diode)
RθCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min
Typical
Maximum Units
-
-
0.38
°C/W
- - 0.70
- 0.05 -
2.7 - 3.3 N*m
- 170 - g
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1000
100
20 µs
10 100 µs
1ms
1 10ms
0.1
1
DC
10 100 1000
VCE (V)
Fig. 13 - Forward SOA
TC = 25°C; TJ ≤ 150°C
10000
700
600
TJ = 25°C
500 TJ = 125°C
400
300
200
100
0
0 5 10 15 20
VGE (V)
Fig. 15 - Typ. Transfer Characteristics
VCE=50V; tp=10µs
120
RG = 4.7 Ω
100
RG = 10 Ω
80
RG = 22 Ω
60
40 RG = 47 Ω
20
0
0 25 50 75 100 125
IF (A)
Fig. 17 - Typical Diode IRR vs. IF
TJ = 125°C
150
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GB50XF120K
Bulletin PD - 94567 rev.B 08/03
1000
100
10
1
10
100
1000
10000
VCE (V)
Fig. 14 - Reverse Bias SOA
TJ = 150°C; VGE =15V
100
90 25°C
80 125°C
70
60
50
40
30
20
10
0
0.0 1.0 2.0 3.0 4.0
VF (V)
Fig. 16 - Typ. Diode Forward Characteristics
tp = 80µs
120
100
80
60
40
20
0
0
10 20 30 40
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 125°C; IF = 50A
50
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet GB50XF120K.PDF ] | |
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