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부품번호 | GB70NA60UF 기능 |
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기능 | Warp 2 Speed IGBT | ||
제조업체 | Vishay Siliconix | ||
로고 | |||
전체 10 페이지수
www.DataSheet.co.kr
GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
600 V
70 A at 88 °C
2.4 V
70 A at 86 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Peak diode forward current
Gate to emitter voltage
IFM
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Document Number: 93103 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB70NA60UF
Vishay Semiconductors "High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
4.5
4.0 TJ = 25 °C
3.5
3.0
TJ = 125 °C
2.5
2.0
0.0002
0.0004
0.0006
0.0008
0.001
IC (mA)
Fig. 5 - Typical IGBT Threshold Voltage
200
175
150
125
100
TJ = 125 °C
75
50 TJ = 25 °C
25
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VFM (V)
Fig. 8 - Typical Diode Forward Characteristics
4
100 A
3
70 A
2
35 A
1
10 30 50 70 90 110 130 150
TJ (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120
IF - Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs. Case
Temperature
1.50
1.25
1.00
0.75
0.50
0.25
Eoff
Eon
0.00
0
20 40 60 80
1000
IC (A)
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
100
td(off)
tf
tr
td(on)
10
0 10 20 30 40 50 60 70 80
IC (A)
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 93103
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 www.DataSheet.co.kr
GB70NA60UF
"High Side Chopper" IGBT SOT-227 Vishay Semiconductors
(Warp 2 Speed IGBT), 70 A
1
2
3
VC 90 %
10 %
90 %
td(off)
10 %
5%
IC
td(on)
tr
Eon
tf
Eoff
Ets = (Eon + Eoff)
Fig. 17b - Switching Loss Waveforms Test Circuit
ORDERING INFORMATION TABLE
t = 5 µs
Device code
G B 70 N A 60 U F
1 2 3 45678
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Generation 5
3 - Current rating (70 = 70 A)
4 - Circuit configuration (N = High Side Chopper)
5 - Package indicator (A = SOT-227)
6 - Voltage rating (60 = 600 V)
7 - Speed/type (U = Ultrafast IGBT)
8 - F = F/W FRED Pt® diode
Document Number: 93103 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
7
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
GB70NA60UF | Warp 2 Speed IGBT | Vishay Siliconix |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |