(PDF) BUX31A Datasheet - Silicon NPN Power Transistor

Número de pieza	BUX31A
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! www.DataSheet.co.kr INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUX31/A/B DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B ·Low Saturation Voltage APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUX31 BUX31A BUX31B 800 900 1000 V VCEO Collector-Emitter Voltage BUX31 BUX31A BUX31B 400 450 500 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 8A ICM Collector Current-Peak 10 A IBB Base Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 5 150 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF BUX31A Data sheet ( Hoja de datos )