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PDF SI2342DS Data sheet ( Hoja de datos )
| Número de pieza | SI2342DS | |
| Descripción | N-Channel 8 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si2342DS
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
8
RDS(on) ()
0.017 at VGS = 4.5 V
0.020 at VGS = 2.5 V
0.022 at VGS = 1.8 V
0.030 at VGS = 1.5 V
0.075 at VGS = 1.2 V
SOT-23
ID (A)a, e
6
6
6
6
6
Qg (Typ.)
6 nC
G1
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches for Low Voltage Gate Drive
• Low Voltage Operating Circuits
- Gate Drive 1.2 V to 5 V
D
(3)
S2
Top View
Marking Code
F2 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
8
±5
6e
6e
6e, b, c
5.8b, c
30
2.1
1.1b, c
2.5
1.6
1.3b, c
0.8b, c
- 55 to 150
Soldering Recommendations (Peak Temperature)
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Symbol
RthJA
RthJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 63302
www.vishay.com
S11-1388-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
Si2342DS
Vishay Siliconix
9
6
Package Limited
3
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3.0 1.0
2.5 0.8
2.0
0.6
1.5
0.4
1.0
0.2
0.5
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63302
www.vishay.com
S11-1388-Rev. A, 11-Jul-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI2342DS.PDF ] | |
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