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부품번호 | 2SC2714 기능 |
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기능 | Silicon NPN Epitaxial Planar Type Transistor | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 8 페이지수
2SC2714
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
Unit: mm
• Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
• Low noise figure: NF = 2.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
VCEO 30 V
Emitter-base voltage
VEBO 4 V
Collector current
IC 20 mA
Base current
IB 4 mA
Collector power dissipation
PC 100 mW
S-MINI
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55 to 125
°C
JEDEC
TO-236
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
SC-59
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Weight: 12 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 1 mA
Cre
fT
Cc・rbb’
NF
Gpe
VCB = 6 V, f = 1 MHz
VCE = 6 V, IC = 1 mA
VCB = 6 V, IE = −1 mA, f = 30 MHz
VCC = 6 V, IE = −1 mA, f = 100 MHz,
Figure 1
Note: hFE classification R: 40 to 80, O: 70 to 140, Y: 100 to 200
Min Typ. Max Unit
⎯ ⎯ 0.5 μA
⎯ ⎯ 0.5 μA
40 ⎯ 200 ⎯
⎯ 0.70 ⎯
pF
⎯ 550 ⎯ MHz
⎯ ⎯ 30 ps
⎯ 2.5 5.0 dB
17 23 ⎯ dB
1 2010-08-24
2SC2714
4 2010-08-24
4페이지 2SC2714
yre-f
PC – Ta
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE Ta (℃)
7 2010-08-24
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 2SC2714.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SC2710 | Silicon NPN Epitaxial Type TRANSISTOR | Toshiba Semiconductor |
2SC2712 | Silicon NPN Epitaxial Type TRANSISTOR | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |