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Número de pieza | V60100C | |
Descripción | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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V60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
TO-220AB
V60100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
IFSM
320 A
VF at IF = 30 A
0.66 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
IRRM
dV/dt
TJ, TSTG
V60100C
100
60
30
320
450
1.0
10 000
- 40 to + 150
UNIT
V
A
A
mJ
A
V/µs
°C
Document Number: 89155 For technical questions within your region, please contact one of the following:
Revision: 17-Nov-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet V60100C.PDF ] |
Número de pieza | Descripción | Fabricantes |
V60100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix |
V60100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
V60100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
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