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PDF VBT30L60C Data sheet ( Hoja de datos )
| Número de pieza | VBT30L60C | |
| Descripción | Dual Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VBT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TMBS ®
TO-263AB
K
2
1
VBT30L60C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
200 A
VF at IF = 15 A
0.45 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VBT30L60C
60
30
15
200
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89329 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet VBT30L60C.PDF ] | |
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