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부품번호 | VB30120C 기능 |
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기능 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | ||
제조업체 | Vishay | ||
로고 | |||
전체 5 페이지수
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30120C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB30120C
PIN 1
K
PIN 2
HEATSINK
VI30120C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
2 x 15 A
120 V
150 A
0.68 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30120C VB30120C
120
30
15
150
1500
- 40 to + 150
VI30120C
UNIT
V
A
A
V
°C
Document Number: 89041 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AB
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.411 (10.45) MAX.
TO-262AA
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
123
0.510 (12.95)
0.470 (11.94)
PIN 1
PIN 3
0.350 (8.89)
0.330 (8.38)
PIN 2
HEATSINK
0.560 (14.22)
0.530 (13.46)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.41 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42
(10.66)
MIN.
0.33
(8.38)
MIN.
0.670 (17.02)
0.591 (15.00)
0.08
(2.032)
MIN.
0.105 (2.67)
(0.095) (2.41)
0.15
(3.81) MIN.
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 89041
Revision: 19-May-08
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
VB30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
VB30120S | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |