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Número de pieza | C3D10170H | |
Descripción | Silicon Carbide Schottky Diode | |
Fabricantes | Cree | |
Logotipo | ||
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C3D10170H–Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
• 1700-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Halogen-Free; RoHS Compliant
Package
TO-247-2
VRRM =
1700 V
IF; TC<135˚C = 14.4 A
Qc =
96 nC
Benefits
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Maximum Ratings
Symbol
Parameter
VRRM
VRSM
VDC
IF
IFRM
IFSM
Ptot
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge
Current
Power Dissipation
Tc Maximum Case Temperature
TJ Operating Junction Range
Tstg Storage Temperature Range
TO-247 Mounting Torque
PIN 1
PIN 2
CASE
Part Number
C3D10170H
Package
TO-247-2
Marking
C3D10170
Value Unit
Test Conditions
Note
1700
1700
1700
V
V
V
14.4
45
26
55
41
231
100
135
A TC<135˚C
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==11
A TTCC==2151˚0C˚C, ,tPt=P=1100msm, sH, aHlfaSlfinSeinWe aWvaev,eD, =D1=1
W TTCC==2151˚0C˚C
˚C
-55 to
+175
-55 to
+135
1
8.8
˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com/power
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
Package Dimensions
Package TO-247-2
POS
Inches
Min
Max
Millimeters
Min
Max
A
0.185
0.209
4.70
5.31
A1
0.087
0.102
2.21
2.59
b
0.040
0.055
1.02
1.40
b1
0.065
0.088
1.65
2.23
C
0.016
0.031
0.41
0.79
D
0.819
0.845
20.80
21.46
E
0.61
0.640
15.49
16.26
e
0.215
0.215
5.46
5.46
L
0.78
0.80
19.81
20.32
L1
0.164
0.176
4.17
4.47
øP
0.140
0.144
3.56
3.66
e
Q
0.212
0.244
5.38
6.20
øR
0.135
0.157
3.43
3.99
øS
0.278
0.288
7.06
7.32
V
0.652
0.662
16.56
16.81
W
0.000
0.006
0.00
0.15
PIN 1
PIN 2
CASE
Diode ModelDiode Model CSD10060
Vf TV=fVT =T +VIfT*+RITf*RT
RVTTVR== 0TT0..==0952200+..+09(T(57Tj35j**++-10((..TT32JJ59****111-001.--133.))4**1100-3-)3)
Note: Tj = Diode Junction Temperature In Degrees Celcius
VT RT
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the
maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
5 C3D10170H Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
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C3D10170H | Silicon Carbide Schottky Diode | Cree |
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