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부품번호 | 2SC3071 기능 |
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기능 | NPN Epitaxial Planar Silicon Transistor | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
전체 3 페이지수
Ordering number:EN946G
NPN Epitaxial Planar Silicon Transistor
2SC3071
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· Low-frequency, general-purpose amplifier., various
drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V).
Package Dimensions
unit:mm
2006B
[2SC3071]
EIAJ : SC-51
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=80V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
120
100
15
200
300
40
1
150
–55 to +150
Unit
V
V
V
mA
mA
mA
W
˚C
˚C
Ratings
min typ
500
400
150
6.5
max
0.1
0.1
2000
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/O2196TS (KOTO) X-6939/6140MO/4207KI/3085KI/2033KI, TS No.946–1/3
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구 성 | 총 3 페이지수 | ||
다운로드 | [ 2SC3071.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SC3070 | High-hFE/ Low-Frequency General-Purpose Amp Applications | Sanyo Semicon Device |
2SC3071 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |