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PDF FGH40N60SFD Data sheet ( Hoja de datos )
| Número de pieza | FGH40N60SFD | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH40N60SFD
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
July 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.43
1.45
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A 80A
4
IC = 20A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
5000
4000
Common Emitter
VGE = 0V, f = 1MHz
Ciss TC = 25oC
3000
2000
Coss
1000
Crss
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
400
100 10µs
10 100µs
1ms
1
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10 ms
DC
10 100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
40A
80A
4
IC = 20A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
Vcc = 100V
9
200V
300V
6
3
0
0 50 100 150
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
10
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
FGH40N60SFD Rev. C
5
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH40N60SFD.PDF ] | |
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