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부품번호 | 2SC3076 기능 |
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기능 | Silicon NPN Epitaxial Type TRANSISTOR | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 5 페이지수
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
2SC3076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• Excellent switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1241
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
50
5
2
1
1.0
10
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05
IC – VBE
2.0
Common emitter
VCE = 2 V
1.5
1.0
0.5
Tc = 100°C 25
−55
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
Safe Operating Area
5
3 IC max (pulsed)*
IC max (continuous)
1 ms*
10 ms*
1 DC operation
Tc = 25°C
100 ms*
0.5
0.3
0.1
0.05 *: Single nonrepetitive pulse
Tc = 25°C
0.03 Curves must be derated
linearly with increase in
temperature.
0.01
0.5
1
35
10
VCEO max
30 50
Collector-emitter voltage VCE (V)
100
2SC3076
12
(1)
10
8
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
6
4
(2)
2
(3)
0
0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
4 2010-02-05
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ 2SC3076.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SC3070 | High-hFE/ Low-Frequency General-Purpose Amp Applications | Sanyo Semicon Device |
2SC3071 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |