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PDF FGH60N60UFD Data sheet ( Hoja de datos )
| Número de pieza | FGH60N60UFD | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH60N60UFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
August 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
120
60
180
298
119
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH60N60UFD Rev. A
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12 12
8
60A 120A
4
IC = 30A
0
0 3 6 9 12 15 18
Gate-Emitter Voltage, VGE [V]
8
120A
4 60A
IC = 30A
0
0 3 6 9 12 15 18
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
6000
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
9
300V
200V
2000
Coes
6
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
30
3
0
0 50 100 150 200
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
500
100
10
10µs
100µs
1ms
Figure 12. Turn off Switching SOA Characteristics
300
100
10 ms
1 DC
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
1
10 100
Collector-Emitter Voltage, VCE [V]
1000
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
FGH60N60UFD Rev. A
5
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH60N60UFD.PDF ] | |
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