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PDF 2SC3113 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3113 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
2SC3113
For Audio Amplifier and Switching Applications
Unit: mm
· High DC current gain: hFE = 600~3600
· High breakdown voltage: VCEO = 50 V
· High collector current: IC = 150 mA (max)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
50
5
150
30
200
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
IEBO
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 10 mA
Cob
NF (1)
NF (2)
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kW
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kW
Note: hFE classification A: 600~1800, B: 1200~3600
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
600 ¾ 3600
¾ 0.12 0.25
V
100 250 ¾ MHz
¾ 3.5 ¾ pF
¾ 0.5 ¾
dB
¾ 0.3 ¾
1 2003-03-25
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC3113.PDF ] | |
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