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W21NM60N PDF 데이터시트 ( Data , Function )

부품번호 W21NM60N 기능
기능 STW21NM60N
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W21NM60N 데이터시트, 핀배열, 회로
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STP/F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600V - 0.17- 17A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650V
650V
650V
650V
650V
< 0.22
< 0.22
< 0.22
< 0.22
< 0.22
17A
17A
17A(1)
17A
17A
1. Limited by wire bonding
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
April 2007
Marking
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Rev 6
Packaging
Tape & reel
Tube
Tube
Tube
Tube
1/18
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W21NM60N pdf, 반도체, 판매, 대치품
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Electrical characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
2 Electrical characteristics
4/18
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Value
Typ.
Max.
Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 1mA, VGS = 0
600
dv/dt(1)
IDSS
IGSS
VGS(th)
RDS(on)
Drain source voltage slope
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDD= 480V, ID= 17A,
VGS= 10V
VDS = Max rating
VDS = Max rating @125°C
VGS = ± 20V
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 8.5 A
2
1. Characteristic value at turn off on inductive load
V
48 V/ns
1 µA
10 µA
100 nA
3 4V
0.170 0.220
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15 V, ID = 8 A
VDS = 25V, f = 1 MHz,
VGS = 0
12
1950
508
38
S
pF
pF
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0V, VDS = 0V to
480V
282 pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 8.5A
RG = 4.7VGS = 10V
(see Figure 20),
(see Figure 17)
22 ns
15 ns
84 ns
31 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480V, ID = 17A,
VGS = 10V,
(see Figure 18)
66 nC
10 nC
33 nC
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
2
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Datasheet pdf - http://www.DataSheet4U.net/

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W21NM60N 전자부품, 판매, 대치품
www.DataSheet.co.kr
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
Figure 7. Output characteristics
Figure 8. Transfer characteristics
Figure 9. Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
7/18
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