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NVTFS5820NL 데이터시트 PDF




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NVTFS5820NL 데이터시트, 핀배열, 회로
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NVTFS5820NL
Power MOSFET
60 V, 11.5 mW, Single NChannel, m8FL
Features
Small Footprint (3.3x3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AECQ101 Qualified
These are PbFree Devices*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
r3e,n4t)RqJA (Notes 1 &
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current limited by package
(Note 4)
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxPkg
60
"20
29
20
21
10
11
8.0
3.2
1.6
247
70
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
55 to
175
°C
Source Current (Body Diode)
IS 17 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 37 A, L = 0.1 mH, RG = 25 W)
EAS 48 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Note 2, 3)
RYJmb
7.3 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
11.5 mW @ 10 V
15 mW @ 4.5 V
ID MAX
29 A
NChannel
D
G
S
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 5820 D
S AYWWG D
GGD
5820
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NVTFS5820NLTAG WDFN8
(PbFree)
1500/Tape &
Reel
NVTFS5820NLTWG WDFN8
(PbFree)
5000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and
soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
July, 2011 Rev. 1
1
Publication Order Number:
NVTFS5820NL/D
Datasheet pdf - http://www.DataSheet4U.net/




NVTFS5820NL pdf, 반도체, 판매, 대치품
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NVTFS5820NL
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
VGS = 0 V
TJ = 25°C
Ciss
1000
800
600
400 Coss
200
0 Crss
0 10 20 30 40 50 60
DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
VDD = 48 V
ID = 10 A
VGS = 4.5 V
tf
tr
10
td(off)
td(on)
10
QT
8
6
4
Qgs Qgd
2 VDS = 48 V
ID = 10 A
0 TJ = 25°C
0 5 10 15 20 25 30
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource Voltage vs. Total
Charge
40
VGS = 0 V
TJ = 25°C
30
20
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 10 V
Single Pulse
TC = 25°C
100 ms 10 ms
10 1 ms
10 ms
1 RDS(on) Limit
Thermal Limit
dc
Package Limit
0.1
0.1
1
10 100
VDS, DRAISN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
60
ID = 37 A
50
40
30
20
10
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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