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Número de pieza | PMV20XN | |
Descripción | N-channel Trench MOSFET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PMV20XN
30 V, 4.8 A N-channel Trench MOSFET
Rev. 1 — 5 April 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj = 25 °C
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
VGS = 4.5 V; Tamb = 25 °C
RDSon
drain-source
on-state
resistance
VGS = 4.5 V; ID = 4.8 A;
Tj = 25 °C
Min Typ Max Unit
- - 30 V
-12 -
12 V
[1] - - 4.8 A
- 19 25 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMV20XN
30 V, 4.8 A N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02
0 0.01
017aaa177
1
10–3
10–2
10–1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa178
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0.02
0
0.01
1
10–3
10–2
10–1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV20XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 April 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
PMV20XN
30 V, 4.8 A N-channel Trench MOSFET
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
PMV20XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 April 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2011. All rights reserved.
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11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet PMV20XN.PDF ] |
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