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PDF PMV22EN Data sheet ( Hoja de datos )
| Número de pieza | PMV22EN | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
Rev. 1 — 30 March 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tamb = 25 °C
voltage
VGS gate-source
voltage
ID drain current
Static characteristics
VGS = 10 V; Tamb = 25 °C
[1]
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 5.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
- - 5.2 A
- 17 22 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tamb = 25 °C
VDS = 30 V; VGS = 0 V; Tamb = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 5.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
VGS = 10 V; ID = 5.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 150 °C
VGS = 4.5 V; ID = 4.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
VDS = 5 V; ID = 3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.01; Tj = 25 °C
ID = 3 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 3 A
IS = 0.93 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
30 - - V
1 1.5 2.5 V
- - 1 µA
- - 10 µA
- - 100 nA
- - 100 nA
- 17 22 mΩ
- 27 34 mΩ
- 22 29 mΩ
- 12 - S
- 8.6 13 nC
- 1.2 - nC
- 1.3 - nC
- 480 - pF
- 110 - pF
- 52 - pF
- 4 - ns
- 15 - ns
- 100 - ns
- 40 - ns
- 0.72 1.2 V
PMV22EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 March 2011
© NXP B.V. 2011. All rights reserved.
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9. Revision history
Table 7. Revision history
Document ID
Release date
PMV22EN v.1
20110330
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMV22EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 March 2011
© NXP B.V. 2011. All rights reserved.
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PMV22EN.PDF ] | |
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